Semiconductor Device and Method of Stacking Semiconductor Die in Mold Laser Package Interconnected by Bumps and Conductive Vias

ABSTRACT

A semiconductor wafer contains a plurality of first semiconductor die. The semiconductor wafer is mounted to a carrier. A channel is formed through the semiconductor wafer to separate the first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. An encapsulant is deposited over the carrier and first semiconductor die and into the channel while a side portion and surface portion of the second semiconductor die remain exposed from the encapsulant. A first conductive via is formed through the encapsulant in the channel. A second conductive via is formed through the encapsulant over a contact pad of the first semiconductor die. A conductive layer is formed over the encapsulant between the first and second conductive vias. An insulating layer is formed over the conductive layer and encapsulant. The carrier is removed. An interconnect structure is formed over the first conductive via.

FIELD OF THE INVENTION

The present invention relates in general to semiconductor devices and,more particularly, to a semiconductor device and method of stackingsemiconductor die in a mold laser package electrically interconnected bybumps and conductive vias.

BACKGROUND OF THE INVENTION

Semiconductor devices are commonly found in modern electronic products.Semiconductor devices vary in the number and density of electricalcomponents. Discrete semiconductor devices generally contain one type ofelectrical component, e.g., light emitting diode (LED), small signaltransistor, resistor, capacitor, inductor, and power metal oxidesemiconductor field effect transistor (MOSFET). Integrated semiconductordevices typically contain hundreds to millions of electrical components.Examples of integrated semiconductor devices include microcontrollers,microprocessors, charged-coupled devices (CCDs), solar cells, anddigital micro-mirror devices (DMDs).

Semiconductor devices perform a wide range of functions such as signalprocessing, high-speed calculations, transmitting and receivingelectromagnetic signals, controlling electronic devices, transformingsunlight to electricity, and creating visual projections for televisiondisplays. Semiconductor devices are found in the fields ofentertainment, communications, power conversion, networks, computers,and consumer products. Semiconductor devices are also found in militaryapplications, aviation, automotive, industrial controllers, and officeequipment.

Semiconductor devices exploit the electrical properties of semiconductormaterials. The atomic structure of semiconductor material allows itselectrical conductivity to be manipulated by the application of anelectric field or base current or through the process of doping. Dopingintroduces impurities into the semiconductor material to manipulate andcontrol the conductivity of the semiconductor device.

A semiconductor device contains active and passive electricalstructures. Active structures, including bipolar and field effecttransistors, control the flow of electrical current. By varying levelsof doping and application of an electric field or base current, thetransistor either promotes or restricts the flow of electrical current.Passive structures, including resistors, capacitors, and inductors,create a relationship between voltage and current necessary to perform avariety of electrical functions. The passive and active structures areelectrically connected to form circuits, which enable the semiconductordevice to perform high-speed calculations and other useful functions.

Semiconductor devices are generally manufactured using two complexmanufacturing processes, i.e., front-end manufacturing, and back-endmanufacturing, each involving potentially hundreds of steps. Front-endmanufacturing involves the formation of a plurality of die on thesurface of a semiconductor wafer. Each die is typically identical andcontains circuits formed by electrically connecting active and passivecomponents. Back-end manufacturing involves singulating individual diefrom the finished wafer and packaging the die to provide structuralsupport and environmental isolation.

One goal of semiconductor manufacturing is to produce smallersemiconductor devices. Smaller devices typically consume less power,have higher performance, and can be produced more efficiently. Inaddition, smaller semiconductor devices have a smaller footprint, whichis desirable for smaller end products. A smaller die size may beachieved by improvements in the front-end process resulting in die withsmaller, higher density active and passive components. Back-endprocesses may result in semiconductor device packages with a smallerfootprint by improvements in electrical interconnection and packagingmaterials.

Most if not all wafer level chip scale packages (WLCSP) require az-direction electrical interconnect structure for signal routing andpackage integration. Conventional WLCSP z-direction electricalinterconnect structures exhibit one or more limitations. In one example,a conventional WLCSP contains a flipchip type semiconductor die andencapsulant formed over the die. An interconnect structure is typicallyformed over, around, and through the semiconductor die and encapsulantfor z-direction vertical electrical interconnect. The flipchipsemiconductor die is electrically connected to the interconnectstructure with bumps. The encapsulant and bump interconnect makespackage stacking difficult to achieve with fine pitch or highinput/output (I/O) count electrical interconnect. In addition, wire bondtype semiconductor die are also difficult to stack without dramaticallyincreasing package height.

SUMMARY OF THE INVENTION

A need exists for a simple and cost effective WLCSP interconnectstructure for applications requiring a fine interconnect pitch andvertical package integration. Accordingly, in one embodiment, thepresent invention is a method of making a semiconductor devicecomprising the steps of providing a semiconductor wafer containing aplurality of first semiconductor die, mounting the semiconductor waferto a carrier, forming a channel through the semiconductor wafer toseparate the first semiconductor die, mounting a second semiconductordie to the first semiconductor die, depositing an encapsulant over thecarrier and first semiconductor die and into the channel while a sideportion and surface portion of the second semiconductor die opposite thefirst semiconductor die remain exposed from the encapsulant, forming aconductive via through the encapsulant, forming a conductive layer overthe encapsulant electrically connected to the conductive via, forming aninsulating layer over the conductive layer and encapsulant, removing thecarrier, and forming an interconnect structure over the conductive via.

In another embodiment, the present invention is a method of making asemiconductor device comprising the steps of providing a semiconductorwafer containing a plurality of first semiconductor die, mounting thesemiconductor wafer to a carrier, forming a channel through thesemiconductor wafer to separate the first semiconductor die, mounting asecond semiconductor die to the first semiconductor die, depositing anencapsulant over the carrier and first semiconductor die and into thechannel, forming a conductive via through the encapsulant, and forming afirst conductive layer over the encapsulant electrically connected tothe conductive via.

In another embodiment, the present invention is a method of making asemiconductor device comprising the steps of providing a firstsemiconductor die, mounting a second semiconductor die to the firstsemiconductor die, depositing a first encapsulant over and around thefirst semiconductor die, forming a first conductive via through thefirst encapsulant around the first semiconductor die, and forming asecond conductive via through the first encapsulant over a contact padof the first semiconductor die.

In another embodiment, the present invention is a semiconductor devicecomprising a first semiconductor die and second semiconductor diemounted to the first semiconductor die. An encapsulant is deposited overand around the first semiconductor die. A first conductive via is formedthrough the encapsulant around the first semiconductor die. A secondconductive via is formed through the encapsulant over a contact pad ofthe first semiconductor die. A conductive layer is formed over theencapsulant between the first and second conductive vias.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a PCB with different types of packages mounted to itssurface;

FIGS. 2 a-2 c illustrate further detail of the representativesemiconductor packages mounted to the PCB;

FIGS. 3 a-3 o illustrate a process of stacking semiconductor die in amold laser package electrically interconnected by bumps and conductivevias;

FIG. 4 illustrates the stacked semiconductor die in a mold laser packageelectrically interconnected by bumps and conductive vias;

FIG. 5 illustrates stacking a plurality of WLCSP electricallyinterconnected by bumps and conductive vias;

FIG. 6 illustrates the encapsulant co-planar with the uppersemiconductor die in the WLCSP;

FIG. 7 illustrates a third semiconductor die mounted to the exposedsemiconductor die in the WLCSP;

FIG. 8 illustrates an RDL formed over the lower semiconductor die in theWLCSP;

FIG. 9 illustrates a heat spreader mounted to the upper and lowersemiconductor die in the WLCSP;

FIG. 10 illustrates a wire bond type semiconductor die and substratemounted to the exposed semiconductor die; and

FIG. 11 illustrates two wire bond type semiconductor die and substratemounted over the lower semiconductor die.

DETAILED DESCRIPTION OF THE DRAWINGS

The present invention is described in one or more embodiments in thefollowing description with reference to the figures, in which likenumerals represent the same or similar elements. While the invention isdescribed in terms of the best mode for achieving the invention'sobjectives, it will be appreciated by those skilled in the art that itis intended to cover alternatives, modifications, and equivalents as maybe included within the spirit and scope of the invention as defined bythe appended claims and their equivalents as supported by the followingdisclosure and drawings.

Semiconductor devices are generally manufactured using two complexmanufacturing processes: front-end manufacturing and back-endmanufacturing. Front-end manufacturing involves the formation of aplurality of die on the surface of a semiconductor wafer. Each die onthe wafer contains active and passive electrical components, which areelectrically connected to form functional electrical circuits. Activeelectrical components, such as transistors and diodes, have the abilityto control the flow of electrical current. Passive electricalcomponents, such as capacitors, inductors, resistors, and transformers,create a relationship between voltage and current necessary to performelectrical circuit functions.

Passive and active components are formed over the surface of thesemiconductor wafer by a series of process steps including doping,deposition, photolithography, etching, and planarization. Dopingintroduces impurities into the semiconductor material by techniques suchas ion implantation or thermal diffusion. The doping process modifiesthe electrical conductivity of semiconductor material in active devices,transforming the semiconductor material into an insulator, conductor, ordynamically changing the semiconductor material conductivity in responseto an electric field or base current. Transistors contain regions ofvarying types and degrees of doping arranged as necessary to enable thetransistor to promote or restrict the flow of electrical current uponthe application of the electric field or base current.

Active and passive components are formed by layers of materials withdifferent electrical properties. The layers can be formed by a varietyof deposition techniques determined in part by the type of materialbeing deposited. For example, thin film deposition may involve chemicalvapor deposition (CVD), physical vapor deposition (PVD), electrolyticplating, and electroless plating processes. Each layer is generallypatterned to form portions of active components, passive components, orelectrical connections between components.

The layers can be patterned using photolithography, which involves thedeposition of light sensitive material, e.g., photoresist, over thelayer to be patterned. A pattern is transferred from a photomask to thephotoresist using light. The portion of the photoresist patternsubjected to light is removed using a solvent, exposing portions of theunderlying layer to be patterned. The remainder of the photoresist isremoved, leaving behind a patterned layer. Alternatively, some types ofmaterials are patterned by directly depositing the material into theareas or voids formed by a previous deposition/etch process usingtechniques such as electroless and electrolytic plating.

Depositing a thin film of material over an existing pattern canexaggerate the underlying pattern and create a non-uniformly flatsurface. A uniformly flat surface is required to produce smaller andmore densely packed active and passive components. Planarization can beused to remove material from the surface of the wafer and produce auniformly flat surface. Planarization involves polishing the surface ofthe wafer with a polishing pad. An abrasive material and corrosivechemical are added to the surface of the wafer during polishing. Thecombined mechanical action of the abrasive and corrosive action of thechemical removes any irregular topography, resulting in a uniformly flatsurface.

Back-end manufacturing refers to cutting or singulating the finishedwafer into the individual die and then packaging the die for structuralsupport and environmental isolation. To singulate the die, the wafer isscored and broken along non-functional regions of the wafer called sawstreets or scribes. The wafer is singulated using a laser cutting toolor saw blade. After singulation, the individual die are mounted to apackage substrate that includes pins or contact pads for interconnectionwith other system components. Contact pads formed over the semiconductordie are then connected to contact pads within the package. Theelectrical connections can be made with solder bumps, stud bumps,conductive paste, or wirebonds. An encapsulant or other molding materialis deposited over the package to provide physical support and electricalisolation. The finished package is then inserted into an electricalsystem and the functionality of the semiconductor device is madeavailable to the other system components.

FIG. 1 illustrates electronic device 50 having a chip carrier substrateor printed circuit board (PCB) 52 with a plurality of semiconductorpackages mounted on its surface. Electronic device 50 may have one typeof semiconductor package, or multiple types of semiconductor packages,depending on the application. The different types of semiconductorpackages are shown in FIG. 1 for purposes of illustration.

Electronic device 50 may be a stand-alone system that uses thesemiconductor packages to perform one or more electrical functions.Alternatively, electronic device 50 may be a subcomponent of a largersystem. For example, electronic device 50 may be part of a cellularphone, personal digital assistant (PDA), digital video camera (DVC), orother electronic communication device. Alternatively, electronic device50 can be a graphics card, network interface card, or other signalprocessing card that can be inserted into a computer. The semiconductorpackage can include microprocessors, memories, application specificintegrated circuits (ASIC), logic circuits, analog circuits, RFcircuits, discrete devices, or other semiconductor die or electricalcomponents. The miniaturization and the weight reduction are essentialfor these products to be accepted by the market. The distance betweensemiconductor devices must be decreased to achieve higher density.

In FIG. 1, PCB 52 provides a general substrate for structural supportand electrical interconnect of the semiconductor packages mounted on thePCB. Conductive signal traces 54 are formed over a surface or withinlayers of PCB 52 using evaporation, electrolytic plating, electrolessplating, screen printing, or other suitable metal deposition process.Signal traces 54 provide for electrical communication between each ofthe semiconductor packages, mounted components, and other externalsystem components. Traces 54 also provide power and ground connectionsto each of the semiconductor packages.

In some embodiments, a semiconductor device has two packaging levels.First level packaging is a technique for mechanically and electricallyattaching the semiconductor die to an intermediate carrier. Second levelpackaging involves mechanically and electrically attaching theintermediate carrier to the PCB. In other embodiments, a semiconductordevice may only have the first level packaging where the die ismechanically and electrically mounted directly to the PCB.

For the purpose of illustration, several types of first level packaging,including wire bond package 56 and flip chip 58, are shown on PCB 52.Additionally, several types of second level packaging, including ballgrid array (BGA) 60, bump chip carrier (BCC) 62, dual in-line package(DIP) 64, land grid array (LGA) 66, multi-chip module (MCM) 68, quadflat non-leaded package (QFN) 70, and quad flat package 72, are shownmounted on PCB 52. Depending upon the system requirements, anycombination of semiconductor packages, configured with any combinationof first and second level packaging styles, as well as other electroniccomponents, can be connected to PCB 52. In some embodiments, electronicdevice 50 includes a single attached semiconductor package, while otherembodiments call for multiple interconnected packages. By combining oneor more semiconductor packages over a single substrate, manufacturerscan incorporate pre-made components into electronic devices and systems.Because the semiconductor packages include sophisticated functionality,electronic devices can be manufactured using cheaper components and astreamlined manufacturing process. The resulting devices are less likelyto fail and less expensive to manufacture resulting in a lower cost forconsumers.

FIGS. 2 a-2 c show exemplary semiconductor packages. FIG. 2 aillustrates further detail of DIP 64 mounted on PCB 52. Semiconductordie 74 includes an active region containing analog or digital circuitsimplemented as active devices, passive devices, conductive layers, anddielectric layers formed within the die and are electricallyinterconnected according to the electrical design of the die. Forexample, the circuit may include one or more transistors, diodes,inductors, capacitors, resistors, and other circuit elements formedwithin the active region of semiconductor die 74. Contact pads 76 areone or more layers of conductive material, such as aluminum (Al), copper(Cu), tin (Sn), nickel (Ni), gold (Au), or silver (Ag), and areelectrically connected to the circuit elements formed withinsemiconductor die 74. During assembly of DIP 64, semiconductor die 74 ismounted to an intermediate carrier 78 using a gold-silicon eutecticlayer or adhesive material such as thermal epoxy or epoxy resin. Thepackage body includes an insulative packaging material such as polymeror ceramic. Conductor leads 80 and wire bonds 82 provide electricalinterconnect between semiconductor die 74 and PCB 52. Encapsulant 84 isdeposited over the package for environmental protection by preventingmoisture and particles from entering the package and contaminating die74 or wire bonds 82.

FIG. 2 b illustrates further detail of BCC 62 mounted on PCB 52.Semiconductor die 88 is mounted over carrier 90 using an underfill orepoxy-resin adhesive material 92. Wire bonds 94 provide first levelpackaging interconnect between contact pads 96 and 98. Molding compoundor encapsulant 100 is deposited over semiconductor die 88 and wire bonds94 to provide physical support and electrical isolation for the device.Contact pads 102 are formed over a surface of PCB 52 using a suitablemetal deposition process such as electrolytic plating or electrolessplating to prevent oxidation. Contact pads 102 are electricallyconnected to one or more conductive signal traces 54 in PCB 52. Bumps104 are formed between contact pads 98 of BCC 62 and contact pads 102 ofPCB 52.

In FIG. 2 c, semiconductor die 58 is mounted face down to intermediatecarrier 106 with a flip chip style first level packaging. Active region108 of semiconductor die 58 contains analog or digital circuitsimplemented as active devices, passive devices, conductive layers, anddielectric layers formed according to the electrical design of the die.For example, the circuit may include one or more transistors, diodes,inductors, capacitors, resistors, and other circuit elements withinactive region 108. Semiconductor die 58 is electrically and mechanicallyconnected to carrier 106 through bumps 110.

BGA 60 is electrically and mechanically connected to PCB 52 with a BGAstyle second level packaging using bumps 112. Semiconductor die 58 iselectrically connected to conductive signal traces 54 in PCB 52 throughbumps 110, signal lines 114, and bumps 112. A molding compound orencapsulant 116 is deposited over semiconductor die 58 and carrier 106to provide physical support and electrical isolation for the device. Theflip chip semiconductor device provides a short electrical conductionpath from the active devices on semiconductor die 58 to conductiontracks on PCB 52 in order to reduce signal propagation distance, lowercapacitance, and improve overall circuit performance. In anotherembodiment, the semiconductor die 58 can be mechanically andelectrically connected directly to PCB 52 using flip chip style firstlevel packaging without intermediate carrier 106.

FIGS. 3 a-3 o illustrate, in relation to FIGS. 1 and 2 a-2 c, a processof stacking semiconductor die in a mold laser package electricallyinterconnected by bumps and conductive vias. FIG. 3 a shows asemiconductor wafer 120 with a base substrate material 122, such assilicon, germanium, gallium arsenide, indium phosphide, or siliconcarbide, for structural support. A plurality of semiconductor die orcomponents 124 is formed on wafer 120 separated by saw streets 126 asdescribed above.

FIG. 3 b shows a cross-sectional view of a portion of semiconductorwafer 120. Each semiconductor die 124 has a back surface 128 and anactive surface 130 containing analog or digital circuits implemented asactive devices, passive devices, conductive layers, and dielectriclayers formed within the die and electrically interconnected accordingto the electrical design and function of the die. For example, thecircuit may include one or more transistors, diodes, and other circuitelements formed within active surface 130 to implement analog circuitsor digital circuits, such as digital signal processor (DSP), ASIC,memory, or other signal processing circuit. Semiconductor die 124 mayalso contain integrated passive devices (IPDs), such as inductors,capacitors, and resistors, for RF signal processing. In one embodiment,semiconductor die 124 is a flipchip type semiconductor die.

An electrically conductive layer 132 is formed over active surface 130using PVD, CVD, electrolytic plating, electroless plating process, orother suitable metal deposition process. Conductive layer 132 can be oneor more layers of Al, Cu, Sn, Ni, Au, Ag, or other suitable electricallyconductive material. Conductive layer 132 operates as contact padselectrically connected to the circuits on active surface 130.

A wafer-form substrate or carrier 136 contains temporary or sacrificialbase material such as silicon, polymer, beryllium oxide, or othersuitable low-cost, rigid material for structural support. An interfacelayer or double-sided tape 138 is formed over carrier 136 as a temporaryadhesive bonding film or etch-stop layer. Semiconductor wafer 120 ismounted back surface 128 to carrier 136 and interface layer 138, asshown in FIG. 3 c.

In FIG. 3 d, semiconductor wafer 120 is singulated through saw street126 using a saw blade or laser cutting tool 140 to form channel 141 andseparate the wafer into individual semiconductor die 124 which remainaffixed to carrier 136 and interface layer 138. Channel 141 hassufficient width to contain multiple conductive vias.

FIG. 3 e shows semiconductor die 142 having a back surface 144 andactive surface 146 containing analog or digital circuits implemented asactive devices, passive devices, conductive layers, and dielectriclayers formed within the die and electrically interconnected accordingto the electrical design and function of the die. For example, thecircuit may include one or more transistors, diodes, and other circuitelements formed within active surface 146 to implement analog circuitsor digital circuits, such as DSP, ASIC, memory, or other signalprocessing circuit. Semiconductor die 142 may also contain IPDs, such asinductors, capacitors, and resistors, for RF signal processing. Contactpads 148 are formed over active surface 146 and bumps 150 are formed onthe contact pads. In one embodiment, semiconductor die 142 is a flipchiptype semiconductor die.

Semiconductor die 142 are mounted active surface 146 to active surface130 of semiconductor die 124 using a pick and place operation. Bumps 150of semiconductor die 142 are metallurgically and electrically connectedto contact pads 132 of semiconductor die 124. Accordingly, the circuitson active surface 130 are electrically connected to the circuits onactive surface 146 through the minimal electrical interconnect path ofbumps 150.

In FIG. 3 f, an encapsulant or molding compound 152 is formed aroundsemiconductor die 124 and in the gap between semiconductor die 124 and142 using a paste printing, compressive molding, transfer molding,liquid encapsulant molding, vacuum lamination, spin coating, or othersuitable applicator. Encapsulant 152 can be polymer composite material,such as epoxy resin with filler, epoxy acrylate with filler, or polymerwith proper filler. Encapsulant 152 is non-conductive andenvironmentally protects the semiconductor device from external elementsand contaminants. The back surface 144 and side surfaces ofsemiconductor die 142 remain exposed from encapsulant 152.

FIGS. 3 g-3 h show one embodiment of forming encapsulant 152 aroundsemiconductor die 124 and in the gap between semiconductor die 124 and142. Carrier 136 with semiconductor die 124 and 142 are placed betweenupper mold support 154 and lower mold support 156 of chase mold 158. Theupper mold support 154 includes compressible releasing film 160. Theupper mold support 154 and lower mold support 156 are brought togetherto enclose carrier 136 and semiconductor die 124 and 142 with an openspace over carrier 136, around semiconductor die 124, and betweensemiconductor die 124 and 142. Compressible releasing film 160 conformsto back surface 144 and side surfaces of semiconductor die 142 to blockformation of encapsulant on these surfaces.

In FIG. 3 h, encapsulant 152 in a liquid state is injected into one sideof chase mold 154 with nozzle 162 while vacuum assist 164 draws pressurefrom the opposite side to uniformly fill the open space aroundsemiconductor die 124 and the open space between semiconductor die 124and 142 with the encapsulant. Compressible material 160 preventsencapsulant 152 from flowing over back surface 144 and around the sidesurfaces of semiconductor die 142. After carrier 136 and semiconductordie 124 and 142 are removed from chase mold 158, encapsulant 152 hascoverage as shown in FIG. 3 f.

FIG. 3 i shows another embodiment of depositing encapsulant 152 aroundsemiconductor die 124 and in the gap between semiconductor die 124 and142. Carrier 136 with semiconductor die 124 and 142 are placed withindam 176. Encapsulant 152 is dispensed from nozzles 178 in a liquid stateinto dam 176 to fill the open space around semiconductor die 124 and theopen space between semiconductor die 124 and 142. The volume ofencapsulant 152 dispensed from nozzles 178 is controlled to fill dam 176without covering back surface 144 or the side surfaces of semiconductordie 142, as shown in FIG. 3 f.

In FIG. 3 j, after encapsulant 152 is cured, a plurality of vias 180 isformed through the encapsulant down to carrier 136 using laser drilling,mechanical drilling, or deep reactive ion etching (DRIE). The vias 180can also be formed with a positive encapsulant-blocking via structure inthe mold chase. Likewise, a plurality of vias 182 is formed throughencapsulant 152 down to contact pads 132 of semiconductor die 124.

In FIG. 3 k, vias 180 and 182 are filled with Al, Cu, Sn, Ni, Au, Ag,titanium (Ti), tungsten (W), poly-silicon, or other suitableelectrically conductive material using electrolytic plating, electrolessplating process, or other suitable metal deposition process to formz-direction vertical interconnect conductive mold vias (TMV) or pillars184 and 186, respectively.

In FIG. 3 l, an electrically conductive layer 188 is formed overencapsulant 152 between conductive TMV 184 and 186 using a patterningand metal deposition process such as printing, PVD, CVD, sputtering,electrolytic plating, and electroless plating. Conductive layer 188 canbe one or more layers of Al, Cu, Sn, Ni, Au, Ag, or other suitableelectrically conductive material. Conductive layer 188 is electricallyconnected to conductive TMV 184 and 186.

In FIG. 3 m, an insulating or passivation layer 190 is formed overencapsulant 152 and conductive layer 188 using PVD, CVD, printing, spincoating, spray coating, sintering or thermal oxidation. The insulatinglayer 190 contains one or more layers of silicon dioxide (SiO2), siliconnitride (Si3N4), silicon oxynitride (SiON), tantalum pentoxide (Ta2O5),aluminum oxide (Al2O3), or other material having similar insulating andstructural properties. A portion of insulating layer 190 is removed byan etching process to expose conductive layer 188.

In FIG. 3 n, carrier 136 is removed by chemical etching, mechanicalpeeling, CMP, mechanical grinding, thermal bake, UV light, laserscanning, or wet stripping to expose encapsulant 152, interface layer138 or semiconductor die 124, and conductive TMV 184.

An electrically conductive bump material is deposited over conductiveTMV 184 using an evaporation, electrolytic plating, electroless plating,ball drop, or screen printing process. The bump material can be Al, Sn,Ni, Au, Ag, Pb, Bi, Cu, solder, and combinations thereof, with anoptional flux solution. For example, the bump material can be eutecticSn/Pb, high-lead solder, or lead-free solder. The bump material isbonded to conductive TMV 184 using a suitable attachment or bondingprocess. In one embodiment, the bump material is reflowed by heating thematerial above its melting point to form spherical balls or bumps 192.In some applications, bumps 192 are reflowed a second time to improveelectrical contact to conductive TMV 184. The bumps can also becompression bonded to conductive TMV 184. Bumps 192 represent one typeof interconnect structure that can be formed over conductive TMV 184.The interconnect structure can also use stud bump, micro bump, or otherelectrical interconnect.

In FIG. 3 o, semiconductor die 124 and 142 are singulated throughencapsulant 152 with saw blade or laser cutting tool 194 into individualWLCSP 196. FIG. 4 shows WLCSP 196 after singulation. Semiconductor die124 is directly electrically connected to semiconductor die 142 throughthe minimal interconnect path of bumps 150. Semiconductor die 124 and142 are electrically connected through conductive TMV 184 and 186,conductive layer 188, and bumps 192 to external devices. WLCSP 196 has areduced profile in a molded laser package (MLP) with back surface 144and a portion of the sides of semiconductor die 142 extending fromencapsulant 152. The exposed semiconductor die 142 also enhances thermaldissipation. The electrical interconnection is accomplished using finepitch bumps and conductive TMV for a high I/O count, without formingbond wires.

FIG. 5 shows a plurality of stacked WLCSP 196 electrically connectedthrough conductive layer 188, bumps 192, and conductive TMV 184 and 186.

FIG. 6 shows an embodiment of WLCSP 200, similar to FIG. 4, withencapsulant 152 coplanar with back surface 144 of semiconductor die 142.Encapsulant 152 can be made coplanar with back surface 144 by omittingthe compressible releasing film from the chase mold in FIGS. 3 g-3 h, orby additional filling of dam structure 176 in FIG. 3 i.

FIG. 7 shows an embodiment of WLCSP 202, similar to FIG. 6, withsemiconductor die 204 mounted to back surface 144 of semiconductor die142. Semiconductor die 204 has an active surface 206 containing analogor digital circuits implemented as active devices, passive devices,conductive layers, and dielectric layers formed within the die andelectrically interconnected according to the electrical design andfunction of the die. For example, the circuit may include one or moretransistors, diodes, and other circuit elements formed within activesurface 206 to implement analog circuits or digital circuits, such asDSP, ASIC, memory, or other signal processing circuit. Semiconductor die204 may also contain IPDs, such as inductors, capacitors, and resistors,for RF signal processing.

In one embodiment, semiconductor die 204 is a flipchip typesemiconductor die. Contact pads 208 are formed over active surface 206.Semiconductor die 204 is mounted to semiconductor die 142 with bumps 210formed between contact pads 208 and contact pads 132 prior toencapsulation. The stacked semiconductor die 124, 142, and 204 areencapsulated in the chase mold as described in FIGS. 3 g-3 h, or in thedam structure of FIG. 3 i.

FIG. 8 shows an embodiment of WLCSP 212, similar to FIG. 4, with anelectrically conductive layer or redistribution layer (RDL) 214 formedover back surface 128 of semiconductor die 124 using a patterning andmetal deposition process such as printing, PVD, CVD, sputtering,electrolytic plating, and electroless plating. Conductive layer 214 canbe one or more layers of Al, Cu, Sn, Ni, Au, Ag, or other suitableelectrically conductive material. Bumps 216 are formed over conductivelayer 214 for additional external electrical interconnect I/O count.

FIG. 9 shows an embodiment of WLCSP 220, similar to FIG. 4, with a heatsink or heat spreader 222 mounted to back surface 144 of semiconductordie 142 to dissipate thermal energy from the die. Heat spreader 222 canbe Al, Cu, or another material with high thermal conductivity. Anoptional thermal interface material (TIM) 224 can be formed between backsurface 144 and heat spreader 222. TIM 224 can be aluminum oxide, zincoxide, boron nitride, or pulverized silver. TIM 224 aids in thedistribution and dissipation of heat generated by semiconductor die 142.

A heat sink or heat spreader 226 is mounted to interface layer 138 orback surface 128 of semiconductor die 124 to dissipate thermal energyfrom the die. Heat spreader 226 can be Al, Cu, or another material withhigh thermal conductivity. An optional TIM 228 can be formed betweenback surface 128 and heat spreader 226. TIM 228 can be aluminum oxide,zinc oxide, boron nitride, or pulverized silver. TIM 228 aids in thedistribution and dissipation of heat generated by semiconductor die 124.

FIG. 10 shows an embodiment of WLCSP 230, similar to FIG. 4, withsemiconductor die 232 mounted back surface 233 to multi-layer substrate234 with die attach adhesive 235. The multi-layer substrate 234 includeconductive traces and vias 236 for electrical interconnect.Semiconductor die 232 has an active surface 238 containing analog ordigital circuits implemented as active devices, passive devices,conductive layers, and dielectric layers formed within the die andelectrically interconnected according to the electrical design andfunction of the die. For example, the circuit may include one or moretransistors, diodes, and other circuit elements formed within activesurface 238 to implement analog circuits or digital circuits, such asDSP, ASIC, memory, or other signal processing circuit. Semiconductor die232 may also contain IPDs, such as inductors, capacitors, and resistors,for RF signal processing. In one embodiment, semiconductor die 232 is awire bond type semiconductor die. Contact pads 240 are formed overactive surface 238. Bond wires 242 are electrically connected betweencontact pads 240 and conductive traces and vias 236.

An encapsulant or molding compound 244 is deposited over semiconductordie 232 and substrate 234 using a paste printing, compressive molding,transfer molding, liquid encapsulant molding, vacuum lamination, spincoating, or other suitable applicator. Encapsulant 244 can be polymercomposite material, such as epoxy resin with filler, epoxy acrylate withfiller, or polymer with proper filler. Encapsulant 244 is non-conductiveand environmentally protects the semiconductor device from externalelements and contaminants.

Bumps 246 are formed over conductive traces 236 and metallurgically andelectrically connected to conductive layer 188. Semiconductor die 232 isthus electrically connected through bond wires 242, conductive tracesand vias 236, bumps 246, conductive layer 188, and conductive TMV 184and 186 to semiconductor die 124 and 142.

FIG. 11 shows an embodiment of WLCSP 250 with semiconductor die 252 andmulti-layer substrate 254 disposed over semiconductor die 124. Themulti-layer substrate 254 includes conductive traces and vias 256 forelectrical interconnect. Semiconductor die 252 has an active surface 258containing analog or digital circuits implemented as active devices,passive devices, conductive layers, and dielectric layers formed withinthe die and electrically interconnected according to the electricaldesign and function of the die. For example, the circuit may include oneor more transistors, diodes, and other circuit elements formed withinactive surface 258 to implement analog circuits or digital circuits,such as DSP, ASIC, memory, or other signal processing circuit.Semiconductor die 252 may also contain IPDs, such as inductors,capacitors, and resistors, for RF signal processing. In one embodiment,semiconductor die 252 is a wire bond type semiconductor die. Contactpads 260 are formed over active surface 258. Bond wires 262 areelectrically connected between contact pads 260 and conductive tracesand vias 256. Conductive traces and vias 256 are electrically connectedto contact pads 132 of semiconductor die 124 with bumps 263.Semiconductor die 252 is thus electrically connected through bond wires262, conductive traces and vias 256, and bumps 263 to semiconductor die124.

An encapsulant or molding compound 264 is deposited over semiconductordie 252 and substrate 254 using a paste printing, compressive molding,transfer molding, liquid encapsulant molding, vacuum lamination, spincoating, or other suitable applicator. Encapsulant 264 can be polymercomposite material, such as epoxy resin with filler, epoxy acrylate withfiller, or polymer with proper filler. Encapsulant 264 is non-conductiveand environmentally protects the semiconductor device from externalelements and contaminants.

Semiconductor die 266 is mounted back surface 268 to multi-layersubstrate 270 with die attach adhesive 271. The multi-layer substrate270 includes conductive traces and vias 272 for electrical interconnect.Semiconductor die 266 has an active surface 274 containing analog ordigital circuits implemented as active devices, passive devices,conductive layers, and dielectric layers formed within the die andelectrically interconnected according to the electrical design andfunction of the die. For example, the circuit may include one or moretransistors, diodes, and other circuit elements formed within activesurface 274 to implement analog circuits or digital circuits, such asDSP, ASIC, memory, or other signal processing circuit. Semiconductor die266 may also contain IPDs, such as inductors, capacitors, and resistors,for RF signal processing. In one embodiment, semiconductor die 266 is awire bond type semiconductor die. Contact pads 276 are formed overactive surface 274. Bond wires 278 are electrically connected betweencontact pads 276 and conductive traces and vias 272.

An encapsulant or molding compound 280 is deposited over semiconductordie 266 and substrate 270 using a paste printing, compressive molding,transfer molding, liquid encapsulant molding, vacuum lamination, spincoating, or other suitable applicator. Encapsulant 280 can be polymercomposite material, such as epoxy resin with filler, epoxy acrylate withfiller, or polymer with proper filler. Encapsulant 280 is non-conductiveand environmentally protects the semiconductor device from externalelements and contaminants.

Bumps 282 are formed over conductive traces 272 and metallurgically andelectrically connected to conductive layer 188. Semiconductor die 266 isthus electrically connected through bond wires 278, conductive tracesand vias 272, bumps 282, conductive layer 188, and conductive TMV 184and 186 to semiconductor die 124 and 252.

While one or more embodiments of the present invention have beenillustrated in detail, the skilled artisan will appreciate thatmodifications and adaptations to those embodiments may be made withoutdeparting from the scope of the present invention as set forth in thefollowing claims.

1. A method of making a semiconductor device, comprising: providing asemiconductor wafer containing a plurality of first semiconductor die;mounting the semiconductor wafer to a carrier; forming a channel throughthe semiconductor wafer to separate the first semiconductor die;mounting a second semiconductor die to the first semiconductor die;depositing an encapsulant over the carrier and first semiconductor dieand into the channel while a side portion and surface portion of thesecond semiconductor die opposite the first semiconductor die remainexposed from the encapsulant; forming a conductive via through theencapsulant; forming a conductive layer over the encapsulantelectrically connected to the conductive via; forming an insulatinglayer over the conductive layer and encapsulant; removing the carrier;and forming an interconnect structure over the conductive via.
 2. Themethod of claim 1, wherein depositing the encapsulant over the carrierand first semiconductor die includes: disposing the carrier and firstand second semiconductor die in a chase mold; and dispensing theencapsulant into the chase mold to cover the carrier and firstsemiconductor die while the side portion and surface portion of thesecond semiconductor die remain exposed from the encapsulant.
 3. Themethod of claim 1, wherein depositing the encapsulant over the carrierand first semiconductor die includes: disposing the carrier and firstand second semiconductor die in a chase mold; placing a mold film overthe carrier and first and second semiconductor die; and compressing thechase mold to form the mold film over the carrier and firstsemiconductor die while the side portion and surface portion of thesecond semiconductor die remain exposed from the encapsulant.
 4. Themethod of claim 1, wherein depositing the encapsulant over the carrierand first semiconductor die includes: forming a dam around the carrierand first and second semiconductor die; and dispensing the encapsulantinto the dam to cover the carrier and first semiconductor die while theside portion and surface portion of the second semiconductor die remainexposed from the encapsulant.
 5. The method of claim 1, furtherincluding mounting a third semiconductor die over the secondsemiconductor die.
 6. The method of claim 1, further includingsingulating the first semiconductor die and second semiconductor diethrough the encapsulant.
 7. A method of making a semiconductor device,comprising: providing a semiconductor wafer containing a plurality offirst semiconductor die; mounting the semiconductor wafer to a carrier;forming a channel through the semiconductor wafer to separate the firstsemiconductor die; mounting a second semiconductor die to the firstsemiconductor die; depositing an encapsulant over the carrier and firstsemiconductor die and into the channel; forming a conductive via throughthe encapsulant; and forming a first conductive layer over theencapsulant electrically connected to the conductive via.
 8. The methodof claim 7, wherein depositing the encapsulant over the carrier andfirst semiconductor die includes: disposing the carrier and first andsecond semiconductor die in a chase mold; and dispensing the encapsulantinto the chase mold to cover the carrier and first semiconductor die. 9.The method of claim 7, wherein depositing the encapsulant over thecarrier and first semiconductor die includes: disposing the carrier andfirst and second semiconductor die in a chase mold; placing a mold filmover the carrier and first and second semiconductor die; and compressingthe chase mold to form the mold film over the carrier and firstsemiconductor die.
 10. The method of claim 7, wherein depositing theencapsulant over the carrier and first semiconductor die includes:forming a dam around the carrier and first and second semiconductor die;and dispensing the encapsulant into the dam to cover the carrier andfirst semiconductor die.
 11. The method of claim 7, further includingforming a heat spreader over the first semiconductor die or secondsemiconductor die.
 12. The method of claim 7, further includingdepositing the encapsulant co-planar with a surface of the secondsemiconductor die opposite the first semiconductor die.
 13. The methodof claim 7, further including forming a second conductive layer over thefirst semiconductor die.
 14. A method of making a semiconductor device,comprising: providing a first semiconductor die; mounting a secondsemiconductor die to the first semiconductor die; depositing a firstencapsulant over and around the first semiconductor die; forming a firstconductive via through the first encapsulant around the firstsemiconductor die; and forming a second conductive via through the firstencapsulant over a contact pad of the first semiconductor die.
 15. Themethod of claim 14, further including: forming a conductive layer overthe first encapsulant between the first and second conductive vias; andforming an insulating layer over the first encapsulant and conductivelayer.
 16. The method of claim 14, wherein a side portion and surfaceportion of the second semiconductor die opposite the first semiconductordie remain exposed from the first encapsulant.
 17. The method of claim14, wherein the first encapsulant is coplanar with a surface portion ofthe second semiconductor die opposite the first semiconductor die. 18.The method of claim 14, further including: mounting a thirdsemiconductor die to a substrate; mounting the third semiconductor dieand substrate to the second semiconductor die; and depositing a secondencapsulant over the third semiconductor die and substrate.
 19. Themethod of claim 14, further including: mounting the second semiconductordie to a substrate; mounting the second semiconductor die and substrateto the first semiconductor die; and depositing a second encapsulant overthe second semiconductor die and substrate.
 20. The method of claim 14,further including: stacking a plurality of semiconductor devices; andelectrically connecting the stacked semiconductor devices through thefirst and second conductive vias.
 21. A semiconductor device,comprising: a first semiconductor die; a second semiconductor diemounted to the first semiconductor die; an encapsulant deposited overand around the first semiconductor die; a first conductive via formedthrough the encapsulant around the first semiconductor die; a secondconductive via formed through the encapsulant over a contact pad of thefirst semiconductor die; and a conductive layer formed over theencapsulant between the first and second conductive vias.
 22. Thesemiconductor device of claim 21, further including an insulating layerformed over the encapsulant and conductive layer.
 23. The semiconductordevice of claim 21, wherein a side portion and surface portion of thesecond semiconductor die opposite the first semiconductor die remainexposed from the encapsulant.
 24. The semiconductor device of claim 21,wherein the encapsulant is coplanar with a surface portion of the secondsemiconductor die opposite the first semiconductor die.
 25. Thesemiconductor device of claim 21, further including a thirdsemiconductor die mounted over the second semiconductor die.